测试周期：
2-3个月，提供全面的认证计划、测试等服务
产品范围：
适用于MOSFET，Diode，IGBT，第三代半导体器件等元件构成的功率模块。
测试项目：
| 序号 | 测试项目 | 缩写 | 样品数/批 | 测试方法 |
| 1 | Thermal shock test | TST | 6 | IEC 60749-25 |
| 2 | Vibration | V | 6 | DIN EN 60068-2-6 |
| 3 | Mechanical shock | MS | 6 | DIN EN 60068-2-27 |
| 4 | Power cycling | PCsec | 6 | IEC 60749-34 |
| 5 | Power cycle | PCmin | 6 | IEC 60749-34 |
| 6 | High-temperature storage | HTS | 6 | IEC 60749-6 |
| 7 | Low-temperature storage | LTS | 6 | JEDEC JESD-22 A119 |
| 8 | High-temperature reverse bias | HTRB | 6 | IEC 60747-9 |
| 9 | High-temperature gate bias | HTGB | 6 | IEC 60747-9 |
| 10 | High-humidity, high-temperature reverse bias | H3TRB | 6 | IEC 60749-5 |
| 11 | Determining parasitic stray inductance | Lp | 6 | IEC 60747-15 |
| 12 | Determining thermal resistance | Rth | 6 | DIN EN 60747-15 |
| 13 | Determining short-circuit capability | / | 6 | / |
| 14 | Insulation test | / | 6 | / |
| 15 | Determining mechanical data | / | 6 | / |
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